| 摘要 |
A layer of insulating material is preformed on one face (10) of an electrically conductive or semiconductive substrate (6) prior to gas plasma deposition of a film of insulating material on the other face (9) of the substrate. Indulating films are formed much more slowly in a gas plasma than on bare substrates and, after an initial fast growth phase, the insulator thickmess reaches a steady growth phase. Beacuse of the resulting slower rate of insulator formation, control of the desired insulator thickness is easy and it is even easier if the desired insulator thickness is close to the steady growth phase. |
