| 摘要 |
<p>A floating diffusion region and a drain region are formed separately from each other in a substrate. A reset electrode is arranged above an area located between the drain region and the floating diffusion region. A voltage step-up circuit having a reference voltage generator (40) receiving a power source voltage (VDD) for generating a reference voltage (VREF) and a step-up circuit (50) receiving a clock pulse (CP) for applying a voltage level of the clock pulse to the reference voltage applies a voltage (VGG) to the drain region. The gate of a conversion E type MOS transistor for converting and outputting the charge stored in the floating diffusion region to a signal having a voltage level proportional to the charge amount is connected to the floating diffusion region. The reference voltage generator (40) has D type MOS transistor (41) and E type MOS transistor (42) connected in cascade for producing the reference voltage of the value corresponding to the variation from a process center of the manufacturing process of this charge transfer device. The D type MOS transistor (41) has the same conductivity type and construction as the MOS transistor formed of the reset electrode, the floating diffusion region and the drain region. The E type MOS transistor (42) has the same conductivity type as the conversion E type MOS transistor.</p> |
