| 摘要 |
PURPOSE:To completely prevent first semiconductor solution from obstructing due to reprecipitation by extracting the solution of a semiconductor solution injection guide at the time of first liquid growth. CONSTITUTION:A lower slide plate 12 is slid, a substrate supporting recess 21 is made to communicate with a semiconductor solution injection guide 41 through a conduction opening 22, a solution tank member 104 is slid, and a second semiconductor solution tank 124 is corresponded to a guide opening 112. Accordingly, second semiconductor solution 300 is fed into the guide 41, the opening 22 and the recess 21. Then, the member 104 is slid to open the opening 112, and the plate 12 is then slid. Thus, the opening 22 interrupts the conduction of it with the recess 21, communicates the guide 41 with a waste liquid tank 13 to feed down the solution 300 in the guide 41, thereby containing it in the tank 13. A second grown layer is formed on the first grown layer of a semiconductor crystal substrate 100 in this state. Thus, the injection of the solution 300 is smoothly conducted.
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