| 摘要 |
PURPOSE:To obtain a good p-7 junction interface so as to obtain good blue emission, by using a semiconductor element manufacturing method where light radiation is performed when a p-type layer grows. CONSTITUTION:Organic compound or hydride is used as group II and VI raw materials, and Al compound or chlorine compound is used as a n-type impurity raw material, and NH3 is used as a p-type impurity raw material, and a n-type II-VI compound semiconductor layer and a p-type II-VI compound semiconductor layer are laminated. At that time, the n-type II-VI compound semiconductor layer is manufactured by a vapor growth method of conventional heat decomposition. The p-type II-VI compound semiconductor layer is formed by a vapor growth method accompanied by light radiation, for example, excimer laser beam radiation of 350 nm or less in wavelength. Thereupon, since the light is not radiated during n-type growth, decomposition of remaining NH3 does not occur. Thus, a good p-n junction interface is obtained so as to obtain good blue emission. |
