| 摘要 |
A semiconductor device has a substrate with regions (54, 56) of first and second conductivity types forming a junction (58) extending to a surface (60) of the substrate, an oxide layer (66, 68) on the surface and covering the junction and a charged ion region in the oxide layer extending from adjacent the junction at the surface of the substrate over part of the region (54) of first conductivity type, the polarity of the ions in the ion region being that of the region of first conductivity type, whereby the breakdown voltage of the device is increased. |
