发明名称 |
METHOD OF FABRICATING A SEMICONDUCTOR APPARATUS COMPRISING TWO SEMICONDUCTOR DEVICES |
摘要 |
<p>Disclosed is a method of realizing high-density and inexpensive semiconductor apparatus by joining the electrodes of two semiconductor devices. A metal bump formed on a substrate is transferred and joined onto the electrode of first semiconductor device, and electrode of second semiconductor device and the metal bump transferred and joined on the first semiconductor device are positioned, pressed and heated, thereby joining the two semiconductor devices together.</p> |
申请公布号 |
EP0208494(A3) |
申请公布日期 |
1988.08.24 |
申请号 |
EP19860305067 |
申请日期 |
1986.06.30 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HATADA, KENZO |
分类号 |
H01L21/60;H01L21/68;H01L21/98;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L21/98;H01L25/08 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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