发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To extend the life of IC for preventing the yield thereof from declining by means of connecting all wiring layers through the intermediary of multiple through holes. CONSTITUTION:Two each of through holes 21, 22 are made to connect the first and the second wiring layers in addition to the conventional processes. Thus, even if an Al extinction part 30 is produced in a part of one through hole 21, current can run through the intermediary of the other through hole 22 not to abnormally increase the current density in the through hole parts. Through these procedures, measures can be taken to cope with any probable Al extinction phenomenon so that the life of an IC may be extended to prevent the yield thereof from declining.
申请公布号 JPS63204631(A) 申请公布日期 1988.08.24
申请号 JP19870036965 申请日期 1987.02.19
申请人 NEC CORP 发明人 ISHIKAWA HIDEO
分类号 H01L23/522;H01L21/768 主分类号 H01L23/522
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