| 摘要 |
PURPOSE:To make it possible to easily bury the desired material into a fine area with a high accuracy by applying a resist film to the region having stepped groove part and selectively using the resist film remaining on the stepped groove part as the mask after exposure and development. CONSTITUTION:The desired patterning is carried out after forming a PSG film 2 on a substrate 1. The aluminum film 3 is formed over the region including the first stepped groove part A in the specified thickness, namely until it becomes equal in the height to the peripheral PSG film 2 in the first stepped groove part A. When the aluminum film 3 is formed, the second stepped groove part B is formed. A positive resist film 4 is applied on the entire part of the aluminum film 3, the sensitive part at the surface is eliminated through the exposure and development of entire part, thereafter the desired resist pattern 4' is formed within the second stepped groove part B. When dry etching is performed with the resist film pattern 4' in such groove B used as the mask, the aluminum layer 3 on the PSG film 2 is eliminated and thereby the PSG film 2 in the same thickness and the wiring part 3' of aluminum which is electrically connected to said PSG film are flattened and formed on the substrate 1. |
