| 摘要 |
PURPOSE:To improve the throughput of a forming line for semiconductor devices by depositing the pattern of a light shielding film on the light exit face side of a substrate body and coating an antireflection film on the incident face side of the substrate body. CONSTITUTION:The pattern of the integrated circuits to be transferred which is the pattern of the light shielding film consisting of a vapor deposited chromium film 2 is formed on the light exist face 1a side of the substrate body 1 consisting of quartz glass. the antireflection film 3 consisting of MgF2 is coated by vapor deposition on the incident face 1b side of the body 1. The film 3 may be constituted of an org. compd. such as olefin polymer of a fluorine system and deriv. of acrylate or methacrylate. Namely, the film 3 is coated on the body 1 and, therefore, the time for exposing to the resist film on a wafer is shortened by the effect of decreasing the reflection loss of light and increasing the transmittance of light. The throughput in the forming lines for the semiconductors is thereby improved. |
