| 发明名称 |
MANUFACTURE OF COMPOUND SEMICONDUCTOR DEVICE |
| 摘要 |
Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation. |
| 申请公布号 |
JPS63202916(A) |
申请公布日期 |
1988.08.22 |
| 申请号 |
JP19880000802 |
申请日期 |
1988.01.07 |
| 申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
ERITSUKU ROI FUOOSAMU;PIITAA DANIERU KAAKUNAA;JIYOOJI DEIBITSUDO PETEITSUTO;ARAN KURAAKU UOORIN;JIERII MATSUKUFUAASUN UTSUDOORU |
| 分类号 |
H01L21/302;H01L21/20;H01L21/263;H01L21/306;H01L21/3065 |
主分类号 |
H01L21/302 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
