| 摘要 |
PURPOSE:To form minute patterns and lift-off patterns readily, by forming a resist film having a pattern, so that recess parts do not reach the boundary of a substrate, and filling the recess parts with a material, whose O2RIE resistance characteristic is excellent. CONSTITUTION:A pattern of resist 1 is formed so as to reach the vicinity of the boundary of a substrate 2 by a method such that grooves are formed to the intermediate part with positive resist at first. The recess parts in the pattern are filled with a material 3, whose O2RIE resistance characteristic is excellent. With the material, whose O2RIE resistance characteristic is excellent, as a mask 3, the resist is etched by an O2RIE method. Thus a pattern, which is to become a mask for etching and the like is formed. Therefore, it is not necessary to form recess parts to the boundary of the substrate in forming a resist pattern at first. Thus the considerably minute pattern can be formed.
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