| 摘要 |
PURPOSE:To produce the title single crystal having superior uniformity of electric characteristics in the direction of an axis of growth by doping a carbon- contg. semiconductor Ga-As single crystal with an impurity under a specified condition. CONSTITUTION:A Ga-As single crystal contg. 5X10<14>-1X10<16>cm<-3> carbon is doped with 5X10<14>-1X10<16>cm<-3> impurity comprising an element having <=1 segregation coefft. and forming an acceptor type level in a forbidden band width of GaAs. The impurity to be doped is Cr or Zn, and suitable liquid sealant is B2O3, and the pressure of the atmosphere for the growth of the crystal is preferred to be adjusted to ca. 2-50atm. By this constitution, the uniformity of electric characteristics in the axial direction is improved and a semiinsulating Ga-As single crystal to be used effectively for a substrate of GaAs IC is obtd.
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