发明名称 MASK FOR PRODUCING SEMICONDUCTOR
摘要 PURPOSE:To suppress generation of the static electricity of a mask and to decrease sticking of dust by providing a conductive material to the peripheral frame part of a mask support. CONSTITUTION:The mask support 1 is constituted of quartz glass and is internally formed with a patter 2 for prepn. of a semiconductor pattern. The conductive material 3 such as chromium is provided to the periphery of the face of such mask support 1 on which the pattern 2 is formed. Then, the static electricity is hardly generated even if the periphery of the mask support 1 and a plastic case, etc., are brought into friction against each other at the time of putting the mask support 1 into and out of the case. The static electricity to be charged on the mask support 1 is thereby decreased and the dust sticking to the surface of the mask support is decreased as well.
申请公布号 JPS63200152(A) 申请公布日期 1988.08.18
申请号 JP19870033867 申请日期 1987.02.17
申请人 MATSUSHITA ELECTRONICS CORP 发明人 TACHIKAKE AKIHIKO
分类号 G03F1/00;G03F1/40;H01L21/027 主分类号 G03F1/00
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