SEMICONDUCTOR PACKAGE STRUCTURE

摘要

PURPOSE:To form a soft buffer layer between the 1st dielectric substrate and the 2nd dielectric substrate of a semiconductor package and improve the reliability of the coupling of the two substrates whose thermal expansion coefficients are different from each other by a method wherein the 1st dielectric substrate is made of aluminum nitride and the 2nd dielectric substrate is made of ceramics and the two substrates are coupled together with soft metal which is active to ceramics as adhesive. CONSTITUTION:A silicon chip 1 is fixed to an IC support member 31 by a die-bonding layer 2. An interconnection member 7 is composed of a multilayer board containing conducting paths 11. The support member 31 is housed in the recess formed in the rear of the member 7 and the chip is positioned at the center of a stepped hole. The support member 31 is made of aluminum nitride AlN and used as a 1st dielectric substrate and the interconnection member 7 is made of ceramics and used as a 2nd dielectric member. The support member 31 and the member 7 are coupled together with an adhesion member 6. The adhesion member 6 is made of relatively soft metal which is active to ceramics. Wire bonding electrodes 13 and 15 are formed on the surfaces of the member 7 and the chip 1 respectively.