| 摘要 |
PURPOSE:To easily manufacture a mask semiconductor laser by a method wherein a semiconductor laser and a mask layer are formed as one unit and a microscopic hole is made in the mask layer so that a microscopic light-emitting point can be obtained. CONSTITUTION:While a semiconductor laser 2 is being radiated, a mask layer 4 to shade the radiated light of the semiconductor laser 2 is formed at the emitting face of the semiconductor laser; at the same time, an emitting hole K of the radiated light is made in one part of the mask layer 4. For the semiconductor laser 2 an AlGaAs-related laser and a GaInAsP-related laser can be enumerated as representative semiconductor lasers whose wavelengths are 780 nm and 830 nm. As a material for the mask layer 4 to shade the radiated light of the semiconductor laser 2, a metal such as Au, Ag, Cr, or the like and its compound, an amphoteric metal such as Se, Te, Sn or the like and its compound, a non-metal such as carbon, Ge, S or the like and an organic material such as a phthalocyanine-related dye, a cyanine dye or the like can be enumerated. By this setup, it is possible to make the microscopic emitting hole K of the radiated light; it is possible to easily manufacture a mask semiconductor laser.
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