| 摘要 |
PURPOSE:To obtain a forming method for a P-N junction which improves laser characteristics by using a combination of P-type impurity and N-type impurity so as not to form ionic compound each other. CONSTITUTION:When Zn is used as P-type impurity and Se is used as N-type impurity in an impurity pileup mechanism in a hetero boundary, a remarkable Zn pileup occurs. This is because ZnSe formed by reacting the Zn with the Se is first compound having strong ionic bonding energy so that, when it is once formed, it is not easily dissociated, and affinity of aluminum and oxygen is second large to easily cause it to be defective. A combination of P-N junction impurities which do not generate a pileup includes those which scarcely form ionic compound between two types of elements, and a combination of impurity elements to become p + n not equal to 8 where the elements of the periodic table belonging to the p-type impurity is, for example. p and the elements belonging to the N-type impurity is n is selected. Thus, it prevents the impurity pileup of an active layer region in a semiconductor laser to obtain a forming method for a P-N junction which improves laser characteristics. |
