| 摘要 |
PURPOSE:To etch and work a semiconductor with precision of several nm or less, to deposit a thin-film without contaminating the interface and to obtain a simplified processing method for forming fine buried structure by irradiating the semiconductor heated in a vacuum with convergent electron beams and directly etching an irradiating section. CONSTITUTION:A semiconductor 11 heated at 200 deg.C or more in a vacuum is irradiated by convergent electron beams 41, thus directly etching an irradiating section, then finely working it. The irradiating section is etched directly by utilizing electron induced desorption by irradiating the semiconductor 1 with convergent electron beams 11 in the vacuum, and a thin-film is shaped onto the semiconductor through a chemical vapor phase deposition method without bringing the semiconductor 11 into contact with atmospheric air at all, thus forming semiconductor fine buried structure. Accordingly, the fine etching working of the semiconductor in nm scale is enabled through a simple process, and fine buried structure after etching working can be formed. |
