| 摘要 |
PURPOSE:To reduce the chip area of a semiconductor device, to which a power device is formed and which is changed into one chip, by continuously shaping the base of a single crystal island forming the power device in a single crystal layer shaped to a support substrate. CONSTITUTION:In a semiconductor device, which has single crystal layers 1a-1c surrounded by insulating films 2a-2c in a support substrate 3 and each forms elements in respective single crystal island 1a-1c, the base of the single crystal island 1c shaping a power device is formed continuously in a single crystal layer 3A shaped to the support substrate 3. The single crystal islands 1a, 1b are formed into the polycrystalline Si substrate 3 through the insulating films 2a, 2b, but the single crystal Si 1c in a power-device forming region is coated only with the side-wall insulating film 2c, and the base of the single crystal Si 1c is not coated and shaped continuously in the high-concentration N<+> single crystal substrate 3A. P impurity diffusion layers 5 and N<+> impurity diffusion layers 6 are formed, and a thyristor is shaped into the single crystal island 1a, a resistor into the single crystal island 1b and a vertical type MOSFET into the single crystal Si 1c respectively.
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