发明名称 Submicron dimension compound senmiconductor fabrication.
摘要 <p>Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.</p>
申请公布号 EP0278290(A2) 申请公布日期 1988.08.17
申请号 EP19880100945 申请日期 1988.01.22
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FOSSUM, ERIC ROY;PETTIT, GEORGE DAVID;WOODALL, JERRY MAC PHERSON;KIRCHNER, PETER DANIEL;WARREN, ALAN CLARK
分类号 H01L21/302;H01L21/20;H01L21/263;H01L21/306;H01L21/3065 主分类号 H01L21/302
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