| 摘要 |
PURPOSE:To uniformize with good reproducibility oxygen precipitate density by heat-treating the surface of a single-crystal silicon rod by a lamp annealing method at a specific temperature for a short time. CONSTITUTION:The surface of a single-crystal silicon rod is heat-treated at least at 1050 deg.C by a lamp annealing method for a short time. Then, precipitate nuclei distributed in the rod decrease its level on the surface of the silicon crystal at 1050 deg.C or higher, and hold its initial state in the silicon crystal at 1000 deg.C or lower. Its oxygen distribution does not change since its heating time is very short. When such a rod is cut as a silicon substrate and heat-treated, for example, at 1000 deg.C for 16 hours in a dry oxygen atmosphere, oxygen precipitate is uniformly formed while the uniformity of oxygen concentration remains.
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