| 摘要 |
PURPOSE:To facilitate the formation of a fine valve and that of a fine flow passage and to solve the limit of the miniaturization or multiplication of an ink jet recording head as observed in a conventional example, by forming an integrally formed valve by utilizing a part of a substrate in a flow passage. CONSTITUTION:With due regard to the formation of a valve or durability as a substrate, for example, the substrate 1 consisting of a SiO2 layer 3, a polysilicon layer 4 and a SiO2 layer 5 is used on a silicon wafer 2. Next, a heat generator 6 composed of HfB2 and an electrode 14 are formed on the substrate 1. Subsequently, a heat generator and the SiO2 layer 7 becoming the protective layer of the electrode are formed in a thickness of about 2mum by a sputtering method. The formed SiO2 layer 7 and SiO2 layer 5 are treated with a photolithographic technique to form SiO2 patterns 15 on the polysilicon layer 4. By itching the polysilicon layer 4 by immersing the same in an etching liquid, the SiO2 layer 5 being a part of the layer constitution of the substrate is utilized to obtain a valve 8. A part 16 of the flow passage communicating with a liquid chamber is simultaneously formed. After a flow passage wall 10 is formed on a substrate 1, the cover plate 9 of the flow passage is laminated to form a flow passage 12 to complete a recording head. |
