| 摘要 |
PURPOSE:To increase dielectric strength against static electricity and the like, by making the margin of a contact part between a metal wiring and a diffusion layer neighbouring to a contact part between a metal wiring as an external terminal and a diffusion layer, large as compared with the other contact parts. CONSTITUTION:At a contact part 4, the margin 3a of the end-portion of a diffusion layer 3 is made sufficiently large, and at a contact part 7 neighboring to the above contact part also, the margin 6a of the end portion of a diffusion layer 6 is made as large as possible. Especially the margin 6a is made sufficiently large as compared with contact parts at the other parts such as internal circuits. Thereby, even if a high voltage due to electrostatic charge and the like is applied to a metal wiring 2 as an extenal terminal, the migration due to a current flowing between the diffusion layers 3 and 6 does not progress. Therefore, the short circuit between a semiconductor substrate 1 and a metal wiring 5 is prevented, and the dielectric strength is increased.
|
