发明名称 |
METHOD AND APPARATUS FOR APPLYING AMORPHOUS SILICON HYDRIDE TO SUBSTRATE IN PLASMA CHAMBER |
摘要 |
A plasma enclosure (2) containing two electrodes (3 and 4) coupled to a high-frequency generator (5), the substrate (7) being mounted on one of the electrodes. A gas containing at least one silicon compound is introduced into the enclosure and a plasma (8) is created by a radio frequency between the electrodes. The invention is aimed at obtaining a high rate of deposition of semiconductive amorphous silicon on the substrate at the same time as a small number of faults in the deposited film. This objective is obtained by choosing an optimum value of between 30 and 100 MHz/cm for the f/d ratio between the frequency and the distance separating the electrodes, the frequency being between 25 and 150 MHz. At the optimum frequency the rate of deposition is at a maximum and the number of faults is at a minimum. This process can be employed for the deposition of hydrogenated amorphous silicon or of one of its alloys from different gases or gas mixtures, and for producing doped layers. …<IMAGE>… |
申请公布号 |
JPS63197329(A) |
申请公布日期 |
1988.08.16 |
申请号 |
JP19870242397 |
申请日期 |
1987.09.25 |
申请人 |
YUNIBERUSHITE DE NUUSHIYATERU INST DE MIKUROTEKUNIKU |
发明人 |
HAAMAN KARUTEINSU |
分类号 |
C23C16/30;C23C16/22;C23C16/50;C23C16/509;H01L21/205;H01L31/04 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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