| 摘要 |
PURPOSE:To reduce the fraction defective of a low-temperature etching by a method wherein a load of 300 gr or more is applied to a substrate to be etched to decrease the heat resistances of a sample stand and the substrate and the temperature fluctuation of the substrate is lessened. CONSTITUTION:The surface of a cooling sample stand 1 is made its central part into a form protruding 10 mum higher or more than the periphery of the central part. Or, the surface can be part of a spherical surface. An Al foil, an Si grease and so on are interposed between an Si substrate 3 and the cooling stand 1. Press rings 2 are pressed with a load of 300 gr or more, the contact area of the substrate rear and the cooling stand is increased and the heat resistances of the stand and the substrate are decreased. When gas is introduced in a vacuum tank and a plasma etching is performed, the fluctuation of the etching characteristics is inhibited because the temperature fluctuation of the substrate is small and the fraction defective of the low-temperature etching is decreased.
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