| 摘要 |
PURPOSE:To perform easily and surely the selective etching of an N<+> layer and an I-layer on the upper part of a channel, by processing an a-Si surface by O2 plasma and the like, and forming a coating film having durability to hydrazine liquid. CONSTITUTION:A Cr film is deposited on a substrate 1, and a gate electrode 2 is formed. A silicon nitride film (SiN film) 3 and a non-doped a-Si (I-layer) 4 are continuously formed. A pattern applying a photoresist film 5 is formed, wherein only a part corresponding to the upper part of an channel of a-SiTFT is selectively made an aperture, and O2 plasma ashing treatment is performed. Thereby, only on the a-Si surface, an oxidized surface treatment layer 6 is formed. After the photoresist is eliminated, a-Si (n<+> layer) 7 is deposited, and the layers 4 and 7 are formed in the respective specified patterns. Then a source.drain electrode 8 is formed. In this state, the n<+> layer is subjected to etching applying hydrazine liquid. An exposed SiN film 9, the Cr electrode 8 and the glass substrate 1 are not etched in the above process by the hydrazine liquid. |
