| 摘要 |
PURPOSE:To speed-up the reading action of a static type RAM by connecting a complementary common data line with a sense amplifier through the gate of input MOSFET pair and executing a feedback amplification by differential MOSFET pair, etc., connected in a cross. CONSTITUTION:The sense amplifier SA0 is constituted of an N channel MOSFET and a P channel MOSFET in a parallel form. And their gates are provided in serial forms with two pairs of parallel transmission gates MOSFET Q13 and Q36, Q15 and Q37 connected to the non-inversion signal line and inver sion signal line of the complementary common data line and their gates and drains are connected in a cross with each other so as to include the differential MOSFET Q14 and Q16. Thus, the amplifying action of the sense amplifier SA0 is made to get the speed-up and the operating current of the SA0 can be suppressed, so that the speed-up of reading actions of the static type RAM, etc., can be enhanced.
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