| 摘要 |
PURPOSE:To readily and surely remove floating foreign materials on the melt surface and obtain the titled high-quality single crystal in excellent conversion rate into the single crystal, by pushing an inner crucible having flow holes at the bottom into an outer crucible containing a raw material melt and growing the single crystal from the entering raw material melt. CONSTITUTION:A simple raw material 7 of a polycrystal or constituent element and an encapsulating agent 8, e.g. B2O3, etc., are filled in an outer crucible 11 provided in a vertically movable manner through the lower shaft 3 and susceptor 5 in a furnace body 1 of a production apparatus for a compound semiconductor single crystal by the Czochralski process and melted by heating with a heater 4. The outer crucible 11 is then slowly raised and an inner crucible 12, fixed through a fixing jig to the furnace body 1 on the same shaft as that of the outer crucible 11 and having plural flow holes 13 on the tilted surface of the bottom is pushed into the part of the encapsulating liquid 8 in the outer crucible 11 to prevent surface floating foreign materials from entering and admit the encapsulating agent 8. The crucible 11 is then raised to locate the flow holes 13 of the inner crucible 12 at deep positions of the raw material melt 7 and admit the raw material melt 7. Thereby the titled single crystal is grown through the upper shaft 2 and seed crystal 9.
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