| 摘要 |
PURPOSE:To improve conversion rate into a single crystal, by changing the thickness of a liquid encapsulating agent layer in directly synthesizing a compound semiconductor raw material from a simple substance raw material of component elements thereof and pulling up the single crystal from the raw material melt. CONSTITUTION:A raw material of simple substance elements and a liquid encapsulating agent 9 are contained in a crucible 6 and the interior of a furnace body 1 is pressurized with an inert gas, such as N2, etc. A current is passed through a heater 4 to increase the heating temperature. Thereby the encapsulating agent 9 is initially melted to completely soak the simple substance element raw material. When the temperature is further increased, reaction is initiated to synthesize a semiconductor compound. Since the synthesized substance is a solid, it is melted by further increasing the temperature. In this state, an auxiliary shaft 13 is lowered to dip an annular vessel 14 in the encapsulating agent 9, which is then scraped into the vessel 14 to raise the auxiliary shaft 13. After the raw material melt 12 is subsequently stabilized at a single crystal growth temperature, the upper shaft 12 is lowered to compatibilize a seed crystal 10 with the melt 12 and the seed crystal is then pulled up.
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