| 摘要 |
PURPOSE:To manufacture a semiconductor device, from which a semiconductor laser having small astigmatic difference at a multiaxial mode having small return optical noises is obtained, by burying a low index layer having a refractive index smaller than that of a beam outgoing section near a beam outgoing surface except said beam outgoing section in a gain waveguide type semiconductor laser device. CONSTITUTION:The end surface section of double hetero-structure formed onto an N-type GaAs substrate 1 is etched in order to regulate the width of an active layer 4 to (w) extending over length (l). Low index layers 7, 8 having a refractive index smaller than that of a beam outgoing section 4a are buried near a beam outgoing surface except the beam outgoing section 4a regulated in width (w). When length in the direction of beam outgoing is represented by L and the length of the low index layers 7, 8 in said direction by (l), the section of length L has gain waveguide type structure, and the section of length (l) functions as index waveguide type structure. Accordingly, multiaxial mode oscillation is acquired in the same manner as a conventional gain waveguide type at that time, and a value close to an index waveguide type is also obtained as astigmatic difference.
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