| 摘要 |
PURPOSE:To avoid the occurrence of a narrowed part in the middle of a resist and to prevent the occurrence of undercut, by performing high temperature baking of an antireflection film with which aluminum is coated. CONSTITUTION:An aluminum substrate is formed by forming a field oxide film 2, a gate oxide film 3 and the like on a silicon substrate 1 as by a conventional method, and by sputtering an aluminum film 6 on it. An antireflection film 12 is applied on the aluminum substrate. The antireflection film 12 is baked at high temperature. Resist 7 is applied, and a resist pattern 8 is formed. Thereafter, the antireflection film 12 is etched. Then the solubility of the antireflection film 12 is suppressed to a low by the baking. Thus the occurrence of narrowed part in the middle of the resist is avoided, and the occurrence of undercut is prevented.
|
