| 摘要 |
<p>A sputtering process for depositing amorphous films of semiconducting alloys having a reduced number of localized states is disclosed. In particular, hydrogenated alloy films free of polyhydrides may be prepared according to the inventive process. In one application of the process an alloy target is bombarded by separate beams of relatively heavy sputtering ions, such as argon ions, effective in sputtering the target and by passivating ions of a substance effective in passivating localized states in amorphous semiconductor films, such as halogen or hydrogen ions. In another application, targets of the elemental semiconductors that are the constituents of the alloy of the deposited film are simultaneously bombarded by separate pairs of ion beams. Each pair of ion beams includes a beam of passivating ions and a beam of sputtering ions. The products of the sputtering are collected on a remotely located substrate to form a passivated, amorphous alloy film. In a preferred application, amorphous, hydrogenated alloys of germanium and silicon containing hydrogen predominantly in the form of monohydrides are produced. Films produced according to the process may be doped and junction structures formed during deposition by adding dopant ions to a beam of passivating ions.</p> |
