FABRICATION OF DEVICES WITH A SILICON OXIDE REGION

摘要

FABRICATION OF DEVICES WITH A SILICON OXIDE REGION Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperaturesensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures.