| 摘要 |
PURPOSE:To perform partial reforming treatment with good efficiency of electric power by selecting microwave liable to be absorbed to the part necessitating reforming in case of placing a substrate to be treated in a vacuum vessel and heating it with microwave irradiation while introducing reactive gas and subjecting the necessary part of the substrate to reforming treatment. CONSTITUTION:A substrate 31 to be treated is fitted on the window 51 made of quartz which is provided to an electromagnetic wave irradiating means 50 for microwave in the vacuum chamber 11 of a vacuum vessel 10. A gaseous raw material of a film formed on the surface of the substrate 31 is blown thereon uniformly and parallel as shown in arrows 44 from a cylinder 43. Then microwave having frequency sufficiently absorbed by the substrate 31 is applied from the oscillator 55 of the irradiating means 50 and only the substrate is selectively heated and raised in temp. and allowed to react with the introduced gaseous raw material and the film of the product resulting from the decomposition of the reactive gas is formed on the substrate 31. Further treatment such as etching excepting film formation is performed under excellent efficiency of electric power.
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