发明名称 MANUFACTURE OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To cut down the manhours and the material cost by a method wherein a thermal cracking organic insulating film is used as an interlayer insulating film to make through holes partially by selective irradiation with heating beams. CONSTITUTION:A thermal cracking organic insulating film 15 is used as an interlayer insulating film of multilayer interconnection to selectively irradiate the through holes made in the film 15 with heating beams 16. Thus, the parts irradiated with the heating beams 16 are thermocracked (vaporized) resultantly to make the through holes in these parts. Said through holes are finely made corrsponding to the throttling rate of heating beam diameter. Through these procedures, the manhours and the material cost can be cut down enabling the through hole making process as well as the ultra fine through hole formation in excellent economic efficiency to be performed.
申请公布号 JPS63190360(A) 申请公布日期 1988.08.05
申请号 JP19870021743 申请日期 1987.02.03
申请人 OKI ELECTRIC IND CO LTD 发明人 OTA MASAE
分类号 H01L21/312;H01L21/768;H01L23/522 主分类号 H01L21/312
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