| 摘要 |
PURPOSE:To contrive improvement in service life of the title semiconductor device against troubles caused by electromigration by a method wherein the phosphorus concentration in the phosphorus-containing silicon oxide film formed on a semiconductor substrate is controlled in the direction of thickness. CONSTITUTION:The phosphorus concentration of the phosphoruscontaining silicon oxide film, which is an electric insulator of Al and silicon, is controlled in thickness direction. The phenomenon of electromigration has a large accelerated primary factor caused by current density. Accordingly, shape of a contact is flattened by etching by controlling the concentration in the direction of thickness, and the increase in current density at the stepped part can be suppressed. Consequently, the service life of the title semiconductor device against troubles caused by electromigration can be improved.
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