| 摘要 |
PURPOSE:To make it possible to form a flat insulating film on the semiconductor substrate having a roughened surface or a stepping by a method wherein a specific resin solution is coated on a wired semiconductor substrate, and then a heat treatment is performed thereon. CONSTITUTION:The resin solution indicated separately by the formula 'I' is coated on a wired semiconductor substrate, and then a silicon oxynitride insulating film is formed by performing a heat treatment. In the formula 'I' mentioned separately, R indicates an independent alkyl radical, desirably alkyl radical of 1-6C, or aryl radical desiably alkylphenyl radical replaced by phenyl radical or alkyl radical of 1-4C, or alkkoxy radical desirably alkoxy radical of 1-4C, and (n) indicates the degree of polymerization, desirably indicating 10-1000. As a result, a film having excellent coating adaptability and flatness can be formed on the substrate having a roughened surface.
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