| 摘要 |
PURPOSE:To permit a good plasma treatment by connecting a bias voltage source between an electrode to be imposed with a substrate and grounding potential source and regulating the ion energy of a plasma part. CONSTITUTION:High-frequency electric power is supplied from a high-frequency oscillator 3 to capacity type coupling electrodes 10, 11 disposed to confront each other in a vacuum vessel 5. Plasma discharge 9 of gas in the vacuum vessel 5 is generated between the two electrodes 10 and 11 by said electric power. The substrate 6 imposed on the electrode 11 is subjected to a deposition or etching treatment by the ions of the plasma in the generated plasma part 9. The bias voltage source 14 is disposed between the electrode 11 and earth potential 8 of the above-mentioned plasma treatment device. The ion energy of the ions when the ions arrive at the substrate 6 is adjusted by changing the bias voltage. The satisfactory deposition or etching with decreased defects is thereby permitted.
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