| 摘要 |
PURPOSE:To prevent an element from malfunctioning due to the fog of a pattern by polishing the rear surface of a semiconductor substrate, and flattening the substrate surface at the time of forming an element pattern before pattern exposure. CONSTITUTION:The front surface of the GaAs0.61P0.39 epitaxial layer 1 of a substrate 3 is opposed to a polishing plate, and the substrate 3 is bonded to the plate with electron wax. In this case, pressure is applied from the substrate 3 to the whole substrate 3, and the substrate 3 is bonded fixedly to the plate in the state that the warpage of the substrate 3 is forcibly reduced. The substrate 3 is so polished with alumina polisher that the whole thickness of the substrate 3 becomes 350+ or -30mum, and the substrate 3 is then removed from the plate to obtain the flattened substrate. The flattened substrate undergoes pattern exposure. It can prevent an element from malfunctioning due to the fog of the pattern. |
