发明名称 MASKING MATERIAL FOR X-RAY LITHOGRAPHY
摘要 PURPOSE:To provide the title material with various properties such as high permeability to X-ray, high thermal stability, serviceable strength, excellent thermal conductivity, high cooling down effect, transparency by visible light and optical alignment by naked eyes by a method wherein a CVD diamond thin layer with smooth surface is used as a substrate. CONSTITUTION:A CVD diamond thin film is separated on a silicon wafer substrate. First, the surface of this thin film is smoothly ground. Second, the surface is coated with positive type electron beam resist to be development-etched. Next, an evaporation film of gold and tantalum is evaporated to be lifted off by solvent forming a pattern of X-ray absorbing layer. After writing the pattern, silicon wafer leaving the peripheral part thereof as a frame is melted away to make this masking material. Through these procedures, the thin film and a cast iron sheet heated at 600-850 deg.C are fitted with each other in the hydrogen atmosphere requiring no considerable force to assure high grinding efficiency doing no damage to the thin film.
申请公布号 JPS63186427(A) 申请公布日期 1988.08.02
申请号 JP19870017152 申请日期 1987.01.29
申请人 SHOWA DENKO KK 发明人 OBATA TATSUO
分类号 C30B29/04;G03F1/60;H01L21/027;H01L21/30 主分类号 C30B29/04
代理机构 代理人
主权项
地址