发明名称 TARGET ELECTRODE FOR SPUTTERING
摘要 PURPOSE:To stably form an alloy film having an optional compsn. and uniform thickness, by alternately and regularly arranging single targets and alloying elements as a target to be used at the time of forming the alloy film by sputtering according to the compsn. of the alloy film to be formed. CONSTITUTION:The targets 1c, 1d disposed regularly and alternately with the single targets 13c, 13d and the alloying elements 14c, 14d so as to change the surface areas thereof as desired according to the compsn. of the thin alloy film to be formed on the substrate are used if the thin film on the substrate is the thin alloy film of not a single component but various compsn. at the time of forming the target materials in the form of a thin film on the substrate electrode with a sputtering device. The single targets 13c, 13d and conductive materials 14c, 14d as the alloying elements are constituted of plural materials respectively having the same surface area and the areas thereof are changed according to the compsn. of the thin film on the substrate surface.
申请公布号 JPS63186867(A) 申请公布日期 1988.08.02
申请号 JP19870016397 申请日期 1987.01.27
申请人 TOSHIBA CORP 发明人 SANO YUJI
分类号 C23C14/34 主分类号 C23C14/34
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