发明名称 VAPOR EPITAXIAL GROWTH DEVICE
摘要 PURPOSE:To suppress variability of gas flow flux streamline on the surface of substrate crystal and to improve interfacial state of epitaxial crystal, by making a constitution wherein no jigs exist on the top of crystal and no large members move above crystal. CONSTITUTION:The titled device is constituted as follows. Namely, a pedestal member 21 to arrange a substrate stand 22 and a straightening member 20 having a slanted top to make the streamline of gas flowing in the longer direction of a reaction tube downward are set in the reaction tube. The pedestal member 21 is arranged from right under the straightening member 20 to the downstream, the face along in the longer direction of the reaction tube has a wedge shape and the pedestal member can be reciprocated along in the longer direction of the reaction tube. The straightening member 20 has an opening having a larger dimension than that of a substrate 12 on the slanted top of the straightening member and an opening to pass a gas in the vicinity of the contact part of the straightening member 20 and the reaction tube. The substrate stand 22 arranged on the pedestal member 21 is vertically moved against the top of the straightening member 20 by reciprocating the pedestal stand 21.
申请公布号 JPS63185888(A) 申请公布日期 1988.08.01
申请号 JP19870015579 申请日期 1987.01.26
申请人 SUMITOMO ELECTRIC IND LTD;RES DEV CORP OF JAPAN 发明人 YAMAZOE YOSHIMITSU;YONEYAMA SHUNICHI
分类号 C30B25/14;H01L21/205 主分类号 C30B25/14
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