| 摘要 |
PURPOSE:To obtain a self-alignment type TFT with less parasitic capacitances, by forming second thin film layers on a first thin film layer by a photochemical reaction method. CONSTITUTION:A gate electrode 11 is formed on a transmitting substrate 10. Then, a gate insulating film 12 is formed. An amorphous Si 13 is formed, and a pattern is formed. Thereafter, exciting light 15 is projected to the side of the gate electrode 11. The substrate 10 is put in a vacuum chamber and left in Al(CH3)3 gas atmosphere from the side of the semiconductor film 13. Al electrodes 14a and 14b, which are the second thin film layers, are formed. A TFT, in which parasitic capacitances between the gate and the drain and between the gate and the source in a self-alignment type are less, can be obtained. |
