发明名称 RANDOM ACCESS MEMORY
摘要 PURPOSE:To perform the quick write operation and the quick and stable read operation by turning on a first gate means at the time of reading and turning on the first and second gate means at the time of writing. CONSTITUTION:At the time of reading, the first gate means Q1 and Q2 are turned on by a control means to read out data stored in memory cells 1 and 2 to data busses I/O and the inverse of I/O from bit lines through the first gate means Q1 and Q2. At the time of writing, the first gate means Q1 and Q2 and second gate means Q3 and Q4 are turned on by the control means to write data on data busses I/O and the inverse of I/O into memory cells from bit lines through the first gate means Q1 and Q2 and the second gate means Q3 and Q4. At the time of write, the quick write operation is possible because the impedance from data busses to bit lines is reduced; and at the time of reading, the stable read operation is not hindered because the second gate means Q3 and Q4 are not related to it.
申请公布号 JPS63184991(A) 申请公布日期 1988.07.30
申请号 JP19870019013 申请日期 1987.01.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 ARIMOTO KAZUTAMI;MASUKO KOICHIRO;FURUYA KIYOHIRO
分类号 G11C11/409;G11C11/34 主分类号 G11C11/409
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