SEMICONDUCTOR STORAGE DEVICE

摘要

PURPOSE:To provide a highly integrated semiconductor storage device by a method wherein writing in and reading from four memory cells is performed with two bit lines through one contact hole and the number of contact holes can be reduced. CONSTITUTION:Four transistors 6 which are arranged symmetrically with a contact hole 2 as the center of symmetry are mutually separated by isolation regions 7. One bit line 5 is connected to the source regions 6a of two of the four transistors through the contact hole 2 and the other bit line 5 is connected to the source regions 6a of the other two transistors through the same contact hole 2. Therefore, only one contact hole is required for four memory cells.