发明名称 SEMICONDUCTOR MANUFACTURING EQUIPMENT
摘要 PURPOSE:To completely eliminate the negative charge present on a floating gate by a method wherein an ultraviolet ray irradiating part is provided on the die-bonding part of an EPROM assembling device, and ultraviolet rays are made to irradiate on the work before a heat treatment is performed. CONSTITUTION:An ultraviolet ray irradiating means 26, with which ultraviolet rays are made to irradiate on a pellet, is provided on the former stage of the heating device, in which a pellet is adhered to a container by performing a heat treatment. The means 26 is equipped with an ultraviolet ray lamp 10 and a reacting plate, and the irradiation of ultraviolet rays on the pellet is performed by the direct irradiation of the ultraviolet ray lamp and by the indirect irradiation through a reflecting mirror. As a result, negative charge is eliminated before the heat treatment performed for adhesion of the pellet and the sealing of glass, and positive charge is pulled to the insulating film located directly below a floating gate and it does not remain even when a heat treatment is performed. Consequently, the negative charge present on the floating gate can be eliminated.
申请公布号 JPS63182826(A) 申请公布日期 1988.07.28
申请号 JP19870014031 申请日期 1987.01.26
申请人 HITACHI LTD 发明人 FUKUDA MINORU;IKEDA YUJI;UCHIBORI KIYOBUMI
分类号 H01L21/52;H01L21/8247;H01L29/78;H01L29/788;H01L29/792 主分类号 H01L21/52
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