| 摘要 |
PURPOSE:To prevent a wiring disconnection from occurring due to swelling of through hole part during heat treatment process by a method wherein the out gas from a coated silicon oxide film 14 in the through hole part is suppressed by a stopper silicon oxide film. CONSTITUTION:After coating the second silicon nitride film 16 to be an interlayer insulating film of multilayer interconnection resist pattern 17 is formed to isotropically etch a through hole part 18 until reaching a stopper silicon oxide film 15. Next, the through hole part 18 is extended by isotropical etching until reaching the first layer Al wiring 12 using the pattern 17 as a mask. Later, the second Al wiring 19 is formed. Furthermore, a plasma nitride film as a surface protective film 20 is coated. Finally, the whole device is subjected to the final heat treatment.
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