| 发明名称 |
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING AN INTERCONNECTION LAYER |
| 摘要 |
A method of manufacturing a semiconductor device which comprises the steps of forming an interconnection layer through an insulating film on a semiconductor substrate, and connecting the diffusion interconnection region in the surface portion of said substrate to said interconnection layer by growing a metal or metal semiconductor compound on the surface of said substrate and the interconnection layer. |
| 申请公布号 |
DE3377178(D1) |
申请公布日期 |
1988.07.28 |
| 申请号 |
DE19833377178 |
申请日期 |
1983.04.06 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIBATA, TADASHI |
| 分类号 |
H01L21/8234;H01L21/28;H01L21/3205;H01L21/768;H01L23/522;H01L23/532;H01L23/535;H01L27/088;(IPC1-7):H01L21/90;H01L23/52 |
主分类号 |
H01L21/8234 |
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