Rapid thermal chemical vapour deposition apparatus.

摘要

In a chemical vapor deposition apparatus for coating semiconductor wafers, the wafer is held face down in the reaction chamber. A radiant heat source above the wafer and outside the reaction chamber heats the wafer from its backside of a temperature in excess of 1000 DEG C rapidly. In the selective tungsten process the temperature of the wafer is raised from ambient to about 600 DEG C while flowing process gases. At the upper temperature range the heating source can be rapidly cycled on and off to improve the uniformity of coating.