SEMICONDUCTOR RADIATION DETECTOR

摘要

PURPOSE:To obtain a reliable semiconductor radiation detector with high sensitivity that is independent of a surface friable layer by causing ohmic junction electrodes that are formed at both planes of CdTe substrate to have a structure where edges of its electrode and edges of the CdTe crystal substrate should be spaced more than a constant distance apart. CONSTITUTION:The whole plane of a P-type CdTe substrate where about 20mu of a surface friable layer 4 is produced by cutting is coated with a photoresist 5. After cured by heat treatment, the photoresist 5 is exposed to a prescribed electrode pattern. In the case of the pattern to be exposed, its pattern edge is spaced more than thickness of the surface friable layer away from the P-type CdTe substrate edge. Development is carried out after exposure and its pattern is washed by water. Then only the exposed part of the photoresist 5 is removed. When it is immersed in an electroless platinum plating liquid, a Pt electrode 6 is formed at the CdTe plane that is not protected by the photoresist 5. And when the photoresist 5 is removed by acetone, a CdTe semiconductor radiation detector is obtained.