| 摘要 |
PURPOSE:To make it possible to form an InAs epitaxial layer with excellent characteristics, by forming an InAs compound semiconductor epitaxial layer on a garnet substrate. CONSTITUTION:On the surface of a garnet substrate 3, a first epitaxial layer 4 of InAs, for example, is formed in thickness of about 100-300Angstrom in a tempera ture atmosphere with the range of room temperature-200 deg.C. Under the condition where the growth of the first layer 4 is once interrupted, the garnet substrate 3 is heated at 500-580 deg.C, and a second InAs epitaxial layer 5 about 1mum thick is formed on the surface of the first InAs layer 4 under the condition where the garnet substrate 3 is heated. By performing, in such a manner, the epitaxial growth of two stages, the crystallographic axis of the second InAs epitaxial layer 5 coincides with that of the garnet system substrate 3.
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